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DMN2004VK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Gate up to 2kV
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT563
D 2
S 2
G 1
G 2
S 1
D 1
ESD protected up to 2kV
Top View
Bottom View
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number
DMN2004VK-7
DMN2004VK-13
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NAB = Marking Code
NAB YM
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN2004VK
Document number: DS30865 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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相关代理商/技术参数
DMN2004WK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004WK_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004WK-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005DLP4K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005DLP4K-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K_0711 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR